PDF-Datenblatt für FSGYE234R Suchergebnisse
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Art-Nr: FSGYE234R
Hersteller:
Intersil CorporationTemperatur:
Beschreibung:
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(????????MOS??????)PDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
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Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET - FSGYE230R Intersil Corporation
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET - FSGYE230R3 Intersil Corporation
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET - FSGYE230R4 Intersil Corporation
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET - FSGYE234D1
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT - FSGYE234R Intersil Corporation
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(????????MOS??????) - FSGYE234R3
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT - FSGYE234R4
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT
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