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Pfad: Datasheet PDF > Halbleiter-Hersteller > IRG4RC10KDTR > IRG4RC10KDTR Datenblatt

PDF-Datenblatt für  IRG4RC10KDTR  Suchergebnisse

  • Art-Nr: IRG4RC10KDTR

    Hersteller:
    International Rectifier

    Temperatur:

    Beschreibung:
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA

    PDF Größe: Kb PDF-Seiten: Page

    Kaufen IRG4RC10KDTR

 DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:

Verwandte Bestell-Nr

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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
  • IRG4RC10K
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
  • IRG4RC10KD IRF[International Rectifier]
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
  • IRG4RC10KDPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4RC10KDTR International Rectifier
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA
  • IRG4RC10KDTRL International Rectifier
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA
  • IRG4RC10KDTRR International Rectifier
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA
  • IRG4RC10KPBF International
    INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
  • IRG4RC10S International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
  • IRG4RC10SD IRF[International Rectifier]
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
  • IRG4RC10STR
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
  • IRG4RC10STRL
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
  • IRG4RC10STRR
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
  • IRG4RC10U
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
  • IRG4RC10UD International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

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