PDF-Datenblatt für  K4E641612B-TC  Suchergebnisse

• Art-Nr: K4E641612B-TC

  Hersteller:
  SAMSUNG[Samsung semiconductor]

  Temperatur:
  

  Beschreibung:
  16bit CMOS Dynamic with Extended Data

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen K4E641612B-TC

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Verwandte Bestell-Nr

• K4E641612B SAMSUNG[Samsung semiconductor]
  16bit CMOS Dynamic with Extended Data
• K4E641612B-L Samsung semiconductor
  16bit CMOS Dynamic with Extended Data
• K4E641612B-TC SAMSUNG[Samsung semiconductor]
  16bit CMOS Dynamic with Extended Data
• K4E641612B-TC45 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns
• K4E641612B-TC50 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns
• K4E641612B-TL45 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
• K4E641612B-TL50 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
• K4E641612B-TL60 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
• K4E641612C SAMSUNG[Samsung semiconductor]
  16bit CMOS Dynamic with Extended Data
• K4E641612C-45 Samsung semiconductor
  16bit CMOS Dynamic with Extended Data
• K4E641612C-50 Samsung semiconductor
  16bit CMOS Dynamic with Extended Data
• K4E641612C-60 SAMSUNG[Samsung semiconductor]
  16bit CMOS Dynamic with Extended Data
• K4E641612C-L Samsung semiconductor
  16bit CMOS Dynamic with Extended Data
• K4E641612C-T Samsung semiconductor
  16bit CMOS Dynamic with Extended Data
• K4E641612C-T45 Samsung semiconductor
  16bit CMOS Dynamic with Extended Data

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