PDF-Datenblatt für KM416C1004CJ-L45 Suchergebnisse
-
Art-Nr: KM416C1004CJ-L45
Hersteller:
SamsungTemperatur:
Beschreibung:
5V, 1M x 16 bit CMOS DRAM with extended data out, 45nsPDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
Datenblatt Download:
KM416C1004CJ-L45 PDF
Verwandte Bestell-Nr
- KM416C1004C SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416C1004C-45 Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - KM416C1004C-5 Samsung semiconductor
- KM416C1004C-6 Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - KM416C1004C-L45 Samsung semiconductor
- KM416C1004C-L5 Samsung semiconductor
- KM416C1004C-L6 Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - KM416C1004CJ-45 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms - KM416C1004CJ-5 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms - KM416C1004CJ-6 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms - KM416C1004CJ-L45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004CJ-L5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004CJ-L6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004CJL-45 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh - KM416C1004CJL-5 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam