PDF-Datenblatt für KM416V1004CJL-50 Suchergebnisse
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Art-Nr: KM416V1004CJL-50
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SamsungTemperatur:
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1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refreshPDF Größe: Kb PDF-Seiten: Page
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KM416V1004CJL-50 PDF
Verwandte Bestell-Nr
- KM416V1004C
16Bit CMOS Dynamic with Extended Data - KM416V1004C-45 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416V1004C-5 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416V1004C-6 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416V1004C-L45 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416V1004C-L5 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416V1004C-L6 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - KM416V1004CJ-45 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms - KM416V1004CJ-5 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416V1004CJ-50 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms - KM416V1004CJ-6 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416V1004CJ-60 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms - KM416V1004CJ-L5 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416V1004CJ-L6 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416V1004CJL-45 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh
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