PDF-Datenblatt für MRF6S21060N Suchergebnisse
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Art-Nr: MRF6S21060N
Hersteller:
MOTOROLATemperatur:
Beschreibung:
2110???170 Avg., W????DMA Lateral N????hannel Power MOSFETsPDF Größe: Kb PDF-Seiten: Page
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MRF6S21060N PDF
Verwandte Bestell-Nr
- MRF6S21050L MOTOROLA
MRF6S21050L designed W????DMA base station applications with frequencies from 2110 2170 MHz. Suitable TDMA, - MRF6S21050LR3 Freescale Semiconductor,
- MRF6S21050LSR3 Freescale Semiconductor,
- MRF6S21060N MOTOROLA
2110???170 Avg., W????DMA Lateral N????hannel Power MOSFETs - MRF6S21060NBR1
Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - MRF6S21060NR1 Freescale Semiconductor,
- MRF6S21100H Motorola
2170 Avg., W??CDMA Lateral N??Channel Power MOSFET - MRF6S21100HR3 Freescale Semiconductor,
Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - MRF6S21100HSR3 FREESCALE[Freescale Semiconductor,
Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - MRF6S21100N Freescale Semiconductors
Designed W-CDMA base station applications with frequencies from 2110 2170 - MRF6S21100NBR1 Freescale Semiconductors
Designed W-CDMA base station applications with frequencies from 2110 2170 - MRF6S21100NR1 FREESCALE
Power Field Effect Transistors - MRF6S21140 FREESCALE
N-Channel Enhancement-Mode Lateral MOSFETs - MRF6S21140HR3 FREESCALE
N-Channel Enhancement-Mode Lateral MOSFETs - MRF6S21140HR307 FREESCALE[Freescale Semiconductor,
Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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