PDF-Datenblatt für MTW4N80 Suchergebnisse
-
Art-Nr: MTW4N80
Hersteller:
MOTOROLA[Motorola,Temperatur:
Beschreibung:
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATEPDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
Datenblatt Download:
MTW4N80 PDF
Verwandte Bestell-Nr
- MTW45N10 Motorola, Inc
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM - MTW45N10E MOTOROLA
TMOS POWER AMPERES VOLTS RDS(on) 0.035 - MTW45N10ED Semi
TMOS POWER AMPERES VOLTS - MTW4N80 MOTOROLA[Motorola,
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE - MTW4N80E Motorola,
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam