Datasheet PDF के लिए IRG4BC30W04 खोज परिणाम

• हिस्सा नहीं: IRG4BC30W04

  निर्माता:
  IRF[International Rectifier]

  तापमान:
  

  वर्णन:
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

  PDF का आकार: Kb PDF पेज: Page

  खरीदना IRG4BC30W04

DatasheetPDF 1 PDF दस्तावेज़ों आपकी क्वेरी से मेल मिला:

Datasheet डाउनलोड करें:
IRG4BC30W04 PDF

संबंधित हिस्सा नहीं

• IRG4BC30 IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
• IRG4BC30F International Rectifier
  Rate Equivalent Device Hours
• IRG4BC30FD International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
• IRG4BC30FD-S IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
• IRG4BC30FD-SPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
• IRG4BC30FD1 IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
• IRG4BC30FD1PBF International Rectifier
  Fast CoPack IGBT
• IRG4BC30FDPBF International Rectifier
  Fast CoPack 1GBT VCES 600V VCE(on)typ. 1.59V
• IRG4BC30FPBF IRF[International Rectifier]
  Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
• IRG4BC30K International Rectifier
  Rate Equivalent Device Hours
• IRG4BC30K-S
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30K-S04 IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30K-SPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT
• IRG4BC30K-S_04 International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KD International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

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