Scheda PDF Per BCR39PN risultati di ricerca
-
N. parte: BCR39PN
Produttore:
Infineon TechnologiesTemperatura:
Descrizione:
NPN/PNP Silicon Digital Transistor ArrayPDF Dimensioni: Kb PDF Pagine: Page
DatasheetPDF trovati 1 documenti PDF che corrispondono ai criteri di ricerca:
Scheda di download:
BCR39PN PDF
Parte n. connessi
- BCR3
- BCR30 MITSUBISHI[Mitsubishi Electric Semiconductor]
MEDIUM POWER INSULATED TYPE, GLASS PASSIVATION TYPE - BCR300B12
TRIAC|600V V(DRM)|300A I(T)RMS|STF-M23 - BCR300B16
TRIAC|800V V(DRM)|300A I(T)RMS|STF-M23 - BCR300B20
TRIAC|1KV V(DRM)|300A I(T)RMS|STF-M23 - BCR300B24
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 - BCR300B4
TRIAC|200V V(DRM)|300A I(T)RMS|STF-M23 - BCR300B8
TRIAC|400V V(DRM)|300A I(T)RMS|STF-M23 - BCR30AM Mitsubishi Electric Semiconductor
MEDIUM POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE - BCR30AM-12 Powerex Power Semiconductors
Triac Ampere/400-600 Volts - BCR30AM-12L Powerex Power Semiconductors
Triac Ampere/400-600 Volts - BCR30AM-12LA Renesas Technology Corp
Triac Medium Power - BCR30AM-12LA-A8 Renesas
Triac Medium Power - BCR30AM-12LB Renesas
Triac Medium Power product guaranteed maximum junction temperature 150??C) - BCR30AM-12LB-A8 Renesas
Triac Medium Power product guaranteed maximum junction temperature 150??C)
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam