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N. parte: IRF6621
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International RectifierTemperatura:
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combines latest HEXFET Power MOSFET Silicon technologyPDF Dimensioni: Kb PDF Pagine: Page
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IRF6621 PDF
Parte n. connessi
- IRF610 Intersil Corporation
3.3A, 200V, 1.500 N-Channel Power MOSFET - IRF610-613 Fairchild Semiconductor
N-Channel Power MOSFETs, 3.5A, 150-200V - IRF6100 International Rectifier
HEXFET? Power MOSFET - IRF6100PBF
HEXFET Power MOSFET - IRF6100S International Rectifier
HEXFET? Power MOSFET - IRF610A FAIRCHILD[Fairchild Semiconductor]
Advanced Power MOSFET - IRF610B Fairchild Semiconductor
200V N-Channel MOSFET - IRF610PBF Vishay
Power MOSFET - IRF610R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-220AB - IRF610S International Rectifier
HEXFET Power MOSFET - IRF610SPBF International Rectifier
HEXFET? Power MOSFET - IRF611 FAIRCHILD[Fairchild Semiconductor]
N-Channel Power MOSFETs 3.5A 150-200V - IRF611R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.3A I(D) | TO-220AB - IRF612 FAIRCHILD[Fairchild Semiconductor]
N-Channel Power MOSFETs 3.5A 150-200V - IRF612R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.6A I(D) | TO-220AB
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