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N. parte: K4E640812E
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SAMSUNG[Samsung semiconductor]Temperatura:
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8bit CMOS Dynamic with Extended DataPDF Dimensioni: Kb PDF Pagine: Page
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K4E640812E PDF
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- K4E640812B Samsung semiconductor
8bit CMOS Dynamic with Extended Data - K4E640812B-JC-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E640812B-JC-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E640812B-JC-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E640812B-JCL-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E640812B-JCL-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E640812B-JCL-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E640812B-TC-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E640812B-TC-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E640812B-TC-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E640812B-TCL-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E640812B-TCL-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E640812B-TCL-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E640812C Samsung semiconductor
8bit CMOS Dynamic with Extended Data - K4E640812C-JC-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
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