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N. parte: K4F170812D
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Samsung semiconductorTemperatura:
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8Bit CMOS Dynamic with Fast Page ModePDF Dimensioni: Kb PDF Pagine: Page
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K4F170812D PDF
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- K4F170811D Samsung semiconductor
8Bit CMOS Dynamic with Fast Page Mode - K4F170811D-B Samsung
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. - K4F170811D-F Samsung
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. - K4F170812D Samsung semiconductor
8Bit CMOS Dynamic with Fast Page Mode - K4F170812D-B Samsung
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. - K4F170812D-F Samsung
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
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