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Samsung semiconductorTemperatura:
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256K 16/18 banks Direct RDRAMTMPDF Dimensioni: Kb PDF Pagine: Page
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K4R441869B-NMCK7 PDF
Parte n. connessi
- K4R441869B-MCG6 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R441869B-MCK7 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R441869B-MCK8 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R441869B-N(M)CG6 Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-N(M)CK7 Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-N(M)CK8 Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-NCG6 Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-NCK7 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R441869B-NCK8 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R441869B-NMCK7 Samsung semiconductor
256K 16/18 banks Direct RDRAMTM - K4R441869B-NMCK8 Samsung semiconductor
256K 16/18 banks Direct RDRAMTM
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