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1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refreshPDF Dimensioni: Kb PDF Pagine: Page
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KM416C1204CJL-50 PDF
Parte n. connessi
- KM416C1204C
16BIT CMOS DYNAMIC WITH EXTENDED DATA - KM416C1204C-45 Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - KM416C1204C-5 Samsung semiconductor
- KM416C1204C-6 Samsung semiconductor
- KM416C1204C-L45 Samsung semiconductor
- KM416C1204C-L5 Samsung semiconductor
- KM416C1204C-L6 Samsung semiconductor
- KM416C1204CJ-45 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms - KM416C1204CJ-50 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms - KM416C1204CJ-6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204CJ-60 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms - KM416C1204CJ-L45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204CJ-L5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204CJ-L6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204CJL-50 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh
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