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• N. parte: MJD112_02

  Produttore:
  STMicroelectronics

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  Descrizione:
  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Parte n. connessi

• MJD112 Semiconductor
  Complementary Darlington Power Transistors
• MJD112-001 Semiconductor
  Complementary Darlington Power Transistors
• MJD112-1 ON-Semiconductor
  Complementary Darlington Power Transistors
• MJD112-1G Semiconductor
  Complementary Darlington Power Transistors
• MJD11202 STMicroelectronics
  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
• MJD11203 STMicroelectronics
  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
• MJD11206 Semiconductor
  Complementary Darlington Power Transistors
• MJD1121 Motorola,
  SILICON POWER TRANSISTORS AMPERES VOLTS WATTS
• MJD112G Semiconductor
  Complementary Darlington Power Transistors
• MJD112L KEC(Korea Electronics)
  EPITAXIAL PLANAR TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
• MJD112RL Semiconductor
  Complementary Darlington Power Transistors
• MJD112RLG Semiconductor
  Complementary Darlington Power Transistors
• MJD112T4 Motorola,
  SILICON POWER TRANSISTORS AMPERES VOLTS WATTS
• MJD112T4G Semiconductor
  Complementary Darlington Power Transistors
• MJD112_02 STMicroelectronics
  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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