データシートPDFを IRG4BC30KDPBF 検索結果

• 部品番号： IRG4BC30KDPBF

  製造元：
  International Rectifier

  温度：
  

  説明：
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT

  PDFサイズ： Kb PDFページ： Page

  買う IRG4BC30KDPBF

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データシートのダウンロード：
IRG4BC30KDPBF PDF

関連した部分の

• IRG4BC30K International Rectifier
  Rate Equivalent Device Hours
• IRG4BC30K-S
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30K-S04 IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30K-SPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT
• IRG4BC30K-S_04 International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KD International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KD-S
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC30KD-SPBF
  INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC30KD-STRR International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KDPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT
• IRG4BC30KDS IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KPBF IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KS IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KS04 IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
• IRG4BC30KS_04 International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

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