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部品番号: RJK0383DPA
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Renesas Technology Corp温度:
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Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power SwitchingPDFサイズ: Kb PDFページ: Page
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- RJK0383DPA Renesas Technology Corp
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching - RJK0383DPA-00-J0 Renesas
Silicon Channel Power with Schottky Barrier Diode High Speed Power Switching
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