데이터 시트 PDF에 대한 K4R441869A 검색 결과를
-
부품 번호 : K4R441869A
제조 업체 :
SAMSUNG[Samsung semiconductor]온도 :
설명 :
256K 16/18 Dependent Banks Direct RDRAMTMPDF 크기 : Kb PDF 페이지 : Page
DatasheetPDF 찾은 한 문서와 일치하는 검색어 :
데이터 시트 다운로드 :
K4R441869A PDF
관련 일부 지역
- K4R441869A SAMSUNG[Samsung semiconductor]
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869A-N(M)CG6 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R441869A-N(M)CK7 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R441869A-N(M)CK8 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R441869A-NMCG6 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869A-NMCK7 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869A-NMCK8 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869AM-CG6 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R441869AM-CK7 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R441869AM-CK8 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R441869AN-CG6 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R441869AN-CK7 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R441869AN-CK8 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R441869B Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-MCG6 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM
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