Datu lapā PDF Par 2SA542 meklēšanas rezultāti
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Daļa Nr: 2SA542
Ražotājs:
UshaTemperatūra:
Apraksts
Low frequency amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 250mW.PDF izmērs: Kb PDF lapas: Page
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2SA542 PDF
Saistītās puses nav
- 2SA500 Toshiba
(2SAxxx) Transistors - 2SA503
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 600MA I(C) | TO-39 - 2SA504
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-39 - 2SA505 Toshiba Semiconductor
SILICON EPITAXIAL TYPE(PCT PROCESS) - 2SA509 Toshiba
(2SAxxx) Transistors - 2SA509GTM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92 - 2SA509TM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92 - 2SA510
SILICON EPITAXIAL TYPE - 2SA512 Toshiba Semiconductor
SILICON EPITAXIAL TYPE - 2SA52
- 2SA532 Micro Electronics
Medium Power Amplifiers Switches - 2SA537
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | TO-5 - 2SA537B
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92 - 2SA537C
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92 - 2SA539
FREQUENCY AMPLIFIER
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