Datu lapā PDF Par 2SC2500_06 meklēšanas rezultāti

• Daļa Nr: 2SC2500_06

  Ražotājs:
  Toshiba Semiconductor

  Temperatūra:
  

  Apraksts
  Silicon Epitaxial Type Process)

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SC2500_06

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2SC2500_06 PDF

Saistītās puses nav

• 2SC2500 Toshiba Semiconductor
  TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
• 2SC250006 Toshiba Semiconductor
  Silicon Epitaxial Type Process)
• 2SC2500A
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR
• 2SC2500B
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR
• 2SC2500C
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92
• 2SC2500D
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR
• 2SC2500_06 Toshiba Semiconductor
  Silicon NPN Epitaxial Type (PCT Process)
• 2SC2501 Shindengen Electric
  TRANSISTOR
• 2SC2502 Inchange Semiconductor Company Limited
  Silicon Power Transistors
• 2SC2504 ETC[ETC]
  2SC2504
• 2SC2507 Inchange
  Silicon Power Transistor
• 2SC2508
  TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 6A I(C) | SOT-123VAR
• 2SC2509 TOSHIBA
  SILICON EPITAXIAL PLANAR TYPE

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