Datu lapā PDF Par 2SC271207 meklēšanas rezultāti

• Daļa Nr: 2SC271207

  Ražotājs:
  Toshiba Semiconductor

  Temperatūra:
  

  Apraksts
  Silicon Epitaxial Type process)

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SC271207

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Datu lapā Lejupielādēt:
2SC271207 PDF

Saistītās puses nav

• 2SC2710 Toshiba Semiconductor
  TRANSISTOR AUDIO AMPLIFIER APPLICATIONS)
• 2SC2710O
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SPAK
• 2SC2710Y
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SPAK
• 2SC2712 Toshiba Semiconductor
  TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)
• 2SC2712-G-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-L-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-O-AE3-R
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-X-AE3-R
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-Y-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC271207 Toshiba Semiconductor
  Silicon Epitaxial Type process)
• 2SC2712BL Weitron Technology
  
• 2SC2712GR Weitron Technology
  
• 2SC2712GT1G Semiconductor
  Medium Frequency Amplifier Transistor
• 2SC2712L-G-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712L-L-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam