Datu lapā PDF Par 2SC3067G meklēšanas rezultāti

• Daļa Nr: 2SC3067G

  Ražotājs:
  

  Temperatūra:
  

  Apraksts
  TRANSISTOR | BJT | PAIR | NPN | 120V V(BR)CEO | 100MA I(C) | DIP

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SC3067G

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Saistītās puses nav

• 2SC3000 Sanyo
  Epitaxial Planar Silicon Transistor
• 2SC3000D
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
• 2SC3000E
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
• 2SC3000F
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
• 2SC3001 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)
• 2SC3004 Hitachi Semiconductor
  Silicon NPN Epitaxial(???NPN?????
• 2SC3006 Toshiba Semiconductor
  TRANSISTOR BAND POWER AMPLIFIER APPLICATIONS)
• 2SC3007 Toshiba Semiconductor
  SILICON EPITAXIAL TYPE PROCESS)
• 2SC3011 Toshiba
  UHF~C BAND NOISE AMPLIFIER APPLICATIONS
• 2SC3012
  SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
• 2SC3017 Mitsubishi
  EPITAXIAL PLANAR TYPE
• 2SC3018 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)
• 2SC3019 Mitsubishi
  EPITAXIAL PLANAR TYPE
• 2SC3020 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)
• 2SC3021 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)

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