Datu lapā PDF Par 2SD2012_06 meklēšanas rezultāti

• Daļa Nr: 2SD2012_06

  Ražotājs:
  Toshiba Semiconductor

  Temperatūra:
  

  Apraksts
  Silicon Triple Diffused Type

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SD2012_06

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Datu lapā Lejupielādēt:
2SD2012_06 PDF

Saistītās puses nav

• 2SD201 Savantic,
  Silicon Power Transistors
• 2SD2010 ROHM
  1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE
• 2SD2010A
  TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP
• 2SD2010B
  TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP
• 2SD2010C
  TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP
• 2SD2011 ROHM
  1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE
• 2SD2011A
  TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP
• 2SD2011B
  TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP
• 2SD2011C
  TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP
• 2SD2012 Toshiba Semiconductor
  TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
• 2SD201203 STMICROELECTRONICS[STMicroelectronics]
  SILICON POWER TRANSISTOR
• 2SD201206 Toshiba Semiconductor
  Silicon Triple Diffused Type
• 2SD2012_03 STMicroelectronics
  NPN SILICON POWER TRANSISTOR
• 2SD2012_06 Toshiba Semiconductor
  Silicon NPN Triple Diffused Type
• 2SD2014 Inchange
  Silicon Power Transistors

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