Datu lapā PDF Par 2SD812 meklēšanas rezultāti

• Daļa Nr: 2SD812

  Ražotājs:
  Inchange

  Temperatūra:
  

  Apraksts
  Silicon Power Transistor

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SD812

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Datu lapā Lejupielādēt:
2SD812 PDF

Saistītās puses nav

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  DIFFUSED JUNCTION MESA
• 2SD806
  TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C)
• 2SD809 Panasonic Semiconductor
  Audio Frequency Power Amplifier,Low Speed Switching
• 2SD811 Toshiba
  (2SDxxx) TRANSISTOR
• 2SD812 Inchange
  Silicon Power Transistor
• 2SD812P
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
• 2SD812Q
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
• 2SD812R
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
• 2SD813 Panasonic Semiconductor
  EPITAXIAL PLANAR
• 2SD814 Panasonic Semiconductor
  Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification)
• 2SD814A Panasonic Semiconductor
  Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification)
• 2SD814AQ
  TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346
• 2SD814AR
  TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346
• 2SD814AS
  TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346
• 2SD814Q
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346

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