Datu lapā PDF Par 2SJ219S meklēšanas rezultāti

• Daļa Nr: 2SJ219S

  Ražotājs:
  Hitachi Semiconductor

  Temperatūra:
  

  Apraksts
  Silicon P Channel MOS FET(P???MOSFET)

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SJ219S

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Saistītās puses nav

• 2SJ200 Toshiba Semiconductor
  CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
• 2SJ20007 Toshiba Semiconductor
  High Power Amplifier Application
• 2SJ200O
  TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR
• 2SJ200Y
  TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR
• 2SJ200_07 Toshiba Semiconductor
  High Power Amplifier Application
• 2SJ201 Toshiba Semiconductor
  CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
• 2SJ20107 Toshiba Semiconductor
  High-Power Amplifier Application
• 2SJ20109 Toshiba
  High-Power Amplifier Application
• 2SJ201O
  TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
• 2SJ201Y
  TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
• 2SJ201_07 Toshiba Semiconductor
  High-Power Amplifier Application
• 2SJ202 NEC[NEC]
  P-CHANNEL SWITCHING
• 2SJ202-T1 NEC
  MOS field effect transistor
• 2SJ202-T2 NEC
  MOS field effect transistor
• 2SJ203 Guangdong Kexin Industrial Co.,Ltd
  Fied Effect Transistor

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