Datu lapā PDF Par 3N51 meklēšanas rezultāti

• Daļa Nr: 3N51

  Ražotājs:
  

  Temperatūra:
  

  Apraksts
  TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 15A I(C) | TO-36VAR

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 3N51

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Saistītās puses nav

• 3N100E MOTOROLA[Motorola,
  TMOS POWER AMPERES 1000 VOLTS
• 3N128 ETC[ETC]
  Silicon Transistor
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  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N143 General Electric Solid State
  Silicon Transistor
• 3N152 RICOH[RICOH electronics devices division]
  PWM/VFM Step-down DC/DC Converter
• 3N153 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N154 ETC[ETC]
  SILICON TRANSISTOR
• 3N155
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N158
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N159
  TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
• 3N161 Intersil
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
• 3N163 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N163-4 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N164 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N165 Calogic,
  Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

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