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Daļa Nr: APT1001R3BN
Ražotājs:
Advanced Power TechnologyTemperatūra:
Apraksts
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSPDF izmērs: Kb PDF lapas: Page
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APT1001R3BN PDF
Saistītās puses nav
- APT1001 ADPOW[Advanced Power Technology]
Power generation gate charge, high voltage N-Channel enhancement mode power MOSFETs - APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 - APT1001R1AVR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs - APT1001R1BN Advanced Power Technology
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS - APT1001R1BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD - APT1001R1BVFR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs. - APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP - APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO - APT1001R1HVR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs. - APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB - APT1001R2AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3 - APT1001R2BN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD - APT1001R2HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM - APT1001R3AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3 - APT1001R3BN Advanced Power Technology
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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