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Daļa Nr: BF998B
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Vishay TelefunkenTemperatūra:
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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ModePDF izmērs: Kb PDF lapas: Page
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BF998B PDF
Saistītās puses nav
- BF990A PHILIPS[Philips Semiconductors]
N-channel dual-gate MOS-FET - BF990AT/R
TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 30MA I(D) | SOT-143 - BF991 Philips Semiconductors
N-channel dual-gate MOS-FET - BF9912
From datasheet system - BF991T/R
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(D) | SOT-143 - BF992 Philips Semiconductors
Silicon N-channel dual gate MOS-FET - BF992/R
Silicon N-Channel Dual-Gate MOS-FETs - BF9923
From datasheet system - BF992T/R
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 40MA I(D) | SOT-143 - BF993
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143 - BF994 SIEMENS[Siemens Semiconductor Group]
Silicon Channel MOSFET Tetrode applications, especially input mixer stages with wide tuning range, e.g. CATV tuners) - BF994S PHILIPS
N-channel dual-gate MOS-FET - BF994S2
From datasheet system - BF994SA Vishay Telefunken
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF994SB Vishay Telefunken
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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