Datu lapā PDF Par BUZ211 meklēšanas rezultāti
-
Daļa Nr: BUZ211
Ražotājs:
Temperatūra:
Apraksts
N-Channel Enhancement MOSFETPDF izmērs: Kb PDF lapas: Page
DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:
Saistītās puses nav
- BUZ20 Siemens Semiconductor Group
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ201 Siemens Semiconductor Group
main ratings - BUZ202 Siemens Semiconductor Group
MAIN RATINGS - BUZ205 Siemens Semiconductor Group
SIPMOS Power Transistor channel Enhancement mode FREDFET) - BUZ206 Siemens Semiconductor Group
main ratings - BUZ21 Siemens Semiconductor Group
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ210
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10.5A I(D) | TO-204AA - BUZ211
N-Channel Enhancement MOSFET - BUZ213 Siemens Semiconductor Group
main ratings - BUZ214 Siemens Semiconductor Group
main ratings - BUZ215 Siemens Semiconductor Group
SIPMOS Power Transistor channel Enhancement mode FREDFET) - BUZ216 Siemens Semiconductor Group
main ratings - BUZ21CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19A I(D) | CHIP - BUZ21L Siemens Semiconductor Group
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated Logic Level) - BUZ21SMD Infineon Technologies
SIPMOS Power Transistor
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam