Datu lapā PDF Par IRF9133 meklēšanas rezultāti

• Daļa Nr: IRF9133

  Ražotājs:
  SAMSUNG[Samsung semiconductor]

  Temperatūra:
  

  Apraksts
  P-CHANNEL POWER MOSFETS

  PDF izmērs: Kb PDF lapas: Page

  Pirkt IRF9133

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Datu lapā Lejupielādēt:
IRF9133 PDF

Saistītās puses nav

• IRF9130 Samsung semiconductor
  P-CHANNEL POWER MOSFETS
• IRF9130SMD Seme
  P-CHANNEL POWER MOSFET HI.REL APPLICATIONS
• IRF9130SMD05 Seme
  P-CHANNEL POWER MOSFET HI-REL APPLICATIONS
• IRF9131 Samsung semiconductor
  P-CHANNEL POWER MOSFETS
• IRF9132 Samsung semiconductor
  P-CHANNEL POWER MOSFETS
• IRF9133 SAMSUNG[Samsung semiconductor]
  P-CHANNEL POWER MOSFETS
• IRF9140 Seme
  P-CHANNEL POWER MOSFET
• IRF9140SM
  TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC
• IRF9141 Samsung semiconductor
  P-CHANNEL POWER MOSFETS
• IRF9142 Samsung semiconductor
  P-CHANNEL POWER MOSFETS
• IRF9143 Samsung semiconductor
  P-CHANNEL POWER MOSFETS
• IRF9150 Intersil Corporation
  -25A, -100V, 0.150 P-Channel Power MOSFET
• IRF9151
  TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-204AA
• IRF9230 International Rectifier
  TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
• IRF9231 Intersil Corporation
  -5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam