Datu lapā PDF Par IRG4BC20KDPBF meklēšanas rezultāti

• Daļa Nr: IRG4BC20KDPBF

  Ražotājs:
  International Rectifier

  Temperatūra:
  

  Apraksts
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

  PDF izmērs: Kb PDF lapas: Page

  Pirkt IRG4BC20KDPBF

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Datu lapā Lejupielādēt:
IRG4BC20KDPBF PDF

Saistītās puses nav

• IRG4BC20K International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
• IRG4BC20K-S International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
• IRG4BC20K-SPBF International Rectifier
  Short Circuit Rated UltraFast IGBT
• IRG4BC20KD International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
• IRG4BC20KD-S International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
• IRG4BC20KD-SPBF International
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE
• IRG4BC20KDPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC20KDS International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
• IRG4BC20KS International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

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