Datu lapā PDF Par IRG4BC20MD-STRL meklēšanas rezultāti
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Daļa Nr: IRG4BC20MD-STRL
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263ABPDF izmērs: Kb PDF lapas: Page
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- IRG4BC20MD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) - IRG4BC20MD-S International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) - IRG4BC20MD-SPBF IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4BC20MD-STRL
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB - IRG4BC20MD-STRR
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB - IRG4BC20MDPBF International
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4BC20MDS International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) - IRG4BC20MDS07 IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4BC20MDS_07 International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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