Datu lapā PDF Par IRG4BC40WL meklēšanas rezultāti

• Daļa Nr: IRG4BC40WL

  Ražotājs:
  IRF[International Rectifier]

  Temperatūra:
  

  Apraksts
  INSULATED GATE BIPOLAR TRANSISTOR

  PDF izmērs: Kb PDF lapas: Page

  Pirkt IRG4BC40WL

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IRG4BC40WL PDF

Saistītās puses nav

• IRG4BC40 IR
  Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
• IRG4BC40F International Rectifier
  INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
• IRG4BC40FD International Rectifier
  Rate Equivalent Device Hours
• IRG4BC40FPBF
  Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
• IRG4BC40K International Rectifier
  Rate Equivalent Device Hours
• IRG4BC40KD International Rectifier
  Rate Equivalent Device Hours
• IRG4BC40KPBF IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR
• IRG4BC40MD International Rectifier
  Rate Equivalent Device Hours
• IRG4BC40S
  INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
• IRG4BC40SD International Rectifier
  Rate Equivalent Device Hours
• IRG4BC40SPBF IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
• IRG4BC40U International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
• IRG4BC40UD International Rectifier
  Rate Equivalent Device Hours
• IRG4BC40UPBF IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
• IRG4BC40W IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

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