Datu lapā PDF Par IRG4RC10KDTRL meklēšanas rezultāti
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Daļa Nr: IRG4RC10KDTRL
Ražotājs:
International RectifierTemperatūra:
Apraksts
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AAPDF izmērs: Kb PDF lapas: Page
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Saistītās puses nav
- IRG4RC10K
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) - IRG4RC10KD IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) - IRG4RC10KDPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4RC10KDTR International Rectifier
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA - IRG4RC10KDTRL International Rectifier
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA - IRG4RC10KDTRR International Rectifier
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA - IRG4RC10KPBF International
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
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