Datu lapā PDF Par JAN2N7370 meklēšanas rezultāti
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Daļa Nr: JAN2N7370
Ražotājs:
MICROSEMI[Microsemi Corporation]Temperatūra:
Apraksts
DARLINGTON HIGH POWER SILICON TRANSISTORPDF izmērs: Kb PDF lapas: Page
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JAN2N7370 PDF
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA - JAN2N7221
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-254AA - JAN2N7236
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 18A I(D) | TO-254AA - JAN2N7237
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA - JAN2N7368 Microsemi
Transistor - JAN2N7369
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254 - JAN2N7370 MICROSEMI[Microsemi Corporation]
DARLINGTON HIGH POWER SILICON TRANSISTOR - JAN2N7371 Microsemi
Darlington Transistor - JAN2N7372
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA - JAN2N7373
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA
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