Datu lapā PDF Par K4E170411D-B meklēšanas rezultāti
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Daļa Nr: K4E170411D-B
Ražotājs:
SamsungTemperatūra:
Apraksts
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.PDF izmērs: Kb PDF lapas: Page
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Saistītās puses nav
- K4E170411D SAMSUNG[Samsung semiconductor]
4Bit CMOS Dynamic with Extended Data - K4E170411D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E170411D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E170412D SAMSUNG[Samsung semiconductor]
4Bit CMOS Dynamic with Extended Data - K4E170412D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E170412D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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