PDF už 2SC3420GR paieškos rezultatai

• Dalis Nr: 2SC3420GR

  Gamintojas:
  

  Temperatūra:
  

  Aprašymas:
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126

  PDF Dydis: Kb PDF Puslapiai: Page

  Pirkti 2SC3420GR

DatasheetPDF rasta +1 PDF dokumentus, atitinkančių jūsų užklausą:

Susijusios dalis jokiu

• 2SC3420 Toshiba Semiconductor
  EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
• 2SC342006 Toshiba Semiconductor
  Silicon Epitaxial Type Process) Strobe Flash Applications
• 2SC3420BL
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
• 2SC3420GR
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
• 2SC3420Y
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
• 2SC3420_06 Toshiba Semiconductor
  Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications
• 2SC3421 Toshiba
  AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
• 2SC342106 Toshiba Semiconductor
  Silicon Epitaxial Type Process) Audio Frequency Power Amplifier Applications
• 2SC3421O
  TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126
• 2SC3421Y
  TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126
• 2SC3421_06 Toshiba Semiconductor
  Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
• 2SC3422 Toshiba Semiconductor
  EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, SPEED SWITCHING)
• 2SC342206 Toshiba Semiconductor
  Silicon Epitaxial Type Process) Audio Frequency Power Amplifier
• 2SC3422O
  TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126
• 2SC3422Y
  TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam