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Dalis Nr: BUW32AP
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TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 10A I(C) | TO-218PDF Dydis: Kb PDF Puslapiai: Page
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- BUW30
HIGH POWER NPN SILICON TRANSISTORS - BUW32
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 10A I(C) | TO-3 - BUW32A Seme
Bipolar Device Hermetically sealed Metal Package - BUW32AP
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 10A I(C) | TO-218 - BUW32APFI
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 10A I(C) | TO-218 - BUW32P
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 10A I(C) | TO-218 - BUW32PFI
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 10A I(C) | TO-218 - BUW34 SEME-LAB[Seme
Bipolar Device Hermetically sealed Metal Package - BUW35 Seme
Bipolar Device - BUW36 Seme
Bipolar Device Hermetically sealed Metal Package - BUW38 SEME-LAB[Seme
Bipolar Device Hermetically sealed Metal Package - BUW39
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | TO-3
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