PDF už IRG4BC30 paieškos rezultatai

• Dalis Nr: IRG4BC30

  Gamintojas:
  IRF[International Rectifier]

  Temperatūra:
  

  Aprašymas:
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

  PDF Dydis: Kb PDF Puslapiai: Page

  Pirkti IRG4BC30

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IRG4BC30 PDF

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• IRG4BC10KDPBF International Rectifier
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• IRG4BC10S International Rectifier
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• IRG4BC10SD International Rectifier
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• IRG4BC10SD-LPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC10SD-S International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
• IRG4BC10SD-SPBF International Rectifier
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• IRG4BC10SD-STRL
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
• IRG4BC10SD-STRR
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
• IRG4BC10SDPBF
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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