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• Dalis Nr: QM150DY-3H

  Gamintojas:
  Mitsubishi Electric Semiconductor

  Temperatūra:
  

  Aprašymas:
  HIGH POWER SWITCHING INSULATED TYPE

  PDF Dydis: Kb PDF Puslapiai: Page

  Pirkti QM150DY-3H

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Susijusios dalis jokiu

• QM150DY-24BK Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-24K Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-2H Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-2HBK Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-2HK Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-3H Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-H Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-H1K
  TRANSISTOR | BJT POWER MODULE | DARLINGTON | 150A I(C)
• QM150DY-HBK Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY-HK Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM150DY24BK
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 150A I(C)
• QM150DY24K
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 150A I(C)
• QM150DY2HBK
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 150A I(C)
• QM150DY2HK
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 150A I(C)
• QM150DY3H
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 150A I(C)

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