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Dalis Nr: QM20TD-H
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Mitsubishi Electric SemiconductorTemperatūra:
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MEDIUM POWER SWITCHING INSULATED TYPEPDF Dydis: Kb PDF Puslapiai: Page
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- QM20TD-H Mitsubishi Electric Semiconductor
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MEDIUM POWER SWITCHING INSULATED TYPE - QM20TG9B
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 20A I(C)
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