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• Część nr: HY51V18163HGJ-5

  Producent:
  Hynix Semiconductor

  Temperatura:
  

  Opis:
  16Bit DRAM

  PDF Rozmiar: Kb PDF Strony: Page

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Powiązane Część nr

• HY51V18163HG(HGL)
  1Mx16|3.3V|1K|5/6|FP/EDO DRAM - 16M
• HY51V18163HGJ Hynix Semiconductor
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• HY51V18163HGLJ-6 HYNIX
  Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
• HY51V18163HGLJ-7 HYNIX
  Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
• HY51V18163HGLT-5 HYNIX
  Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
• HY51V18163HGLT-6 HYNIX
  Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
• HY51V18163HGLT-7 HYNIX
  Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
• HY51V18163HGT Hynix Semiconductor
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• HY51V18163HGT-6 HYNIX[Hynix Semiconductor]
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• HY51V18163HGT-7 Hynix Semiconductor
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