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• Część nr: K4E170811D

  Producent:
  Samsung semiconductor

  Temperatura:
  

  Opis:
  8Bit CMOS Dynamic with Extended Data

  PDF Rozmiar: Kb PDF Strony: Page

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Powiązane Część nr

• K4E170811D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E170811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E170811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E170812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E170812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
• K4E170812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

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