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• Część nr: K4E661612B-TL50

  Producent:
  Samsung

  Temperatura:
  

  Opis:
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

  PDF Rozmiar: Kb PDF Strony: Page

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Powiązane Część nr

• K4E661612B Samsung semiconductor
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• K4E661612B-L Samsung semiconductor
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• K4E661612B-TC45 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns
• K4E661612B-TC50 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns
• K4E661612B-TC60 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns
• K4E661612B-TL45 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
• K4E661612B-TL50 Samsung
  4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

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