Технические характеристики PDF для 28LV256JC-4 результаты поиска
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Electronic component: 28LV256JC-4
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Turbo-ICТемпература:
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Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.PDF Размер: Kb PDF Страниц: Page
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Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - 28LV256JC-4 Turbo-IC
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - 28LV256JC-5 Turbo-IC
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. - 28LV256JC-6 Turbo-IC
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Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - 28LV256JI-5 Turbo-IC
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. - 28LV256JI-6 TRBIC
Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - 28LV256JM-3 Turbo-IC
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. - 28LV256JM-4 Turbo-IC
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - 28LV256JM-5 TRBIC
Speed 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - 28LV256JM-6 TRBIC
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Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. - 28LV256PC-4 TRBIC
Speed 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - 28LV256PC-5 Turbo-IC
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
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