Технические характеристики PDF для CY7C1276V18-400BZXI результаты поиска

• Electronic component: CY7C1276V18-400BZXI

  Произв:
  Cypress Semiconductor

  Температура:
  

  Описание:
  36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

  PDF Размер: Kb PDF Страниц: Page

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• CY7C1276V18-400BZXC Cypress Semiconductor
  36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
• CY7C1276V18-400BZXI Cypress Semiconductor
  36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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