Технические характеристики PDF для HY51V18163HGJ-6 результаты поиска

• Electronic component: HY51V18163HGJ-6

  Произв:
  Hynix Semiconductor

  Температура:
  

  Описание:
  16Bit DRAM

  PDF Размер: Kb PDF Страниц: Page

  Покупать HY51V18163HGJ-6

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• HY51V18163HG(HGL)
  1Mx16|3.3V|1K|5/6|FP/EDO DRAM - 16M
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  Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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  Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
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  Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
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  Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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• HY51V18163HGT-6 HYNIX[Hynix Semiconductor]
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