Технические характеристики PDF для NAND08GR4B2DN6F результаты поиска
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Electronic component: NAND08GR4B2DN6F
Произв:
Numonyx B.VТемпература:
Описание:
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memoriesPDF Размер: Kb PDF Страниц: Page
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4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - NAND08GR4B2DN1E Numonyx B.V
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - NAND08GR4B2DN1F Numonyx B.V
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - NAND08GR4B2DN6E Numonyx B.V
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - NAND08GR4B2DN6F Numonyx B.V
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4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
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