Datasheet PDF pre BCR3AM výsledkami vyhľadávania
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Časť č: BCR3AM
Výrobca:
Mitsubishi Electric SemiconductorTeplota:
Popis:
POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPEVeľkosť PDF: Kb PDF Strany: Page
DatasheetPDF nájdených 1 PDF dokumenty zodpovedajúce dotazu:
Datasheet na stiahnutie:
BCR3AM PDF
Súvisiaci časť ne
- BCR3
- BCR30 MITSUBISHI[Mitsubishi Electric Semiconductor]
MEDIUM POWER INSULATED TYPE, GLASS PASSIVATION TYPE - BCR300B12
TRIAC|600V V(DRM)|300A I(T)RMS|STF-M23 - BCR300B16
TRIAC|800V V(DRM)|300A I(T)RMS|STF-M23 - BCR300B20
TRIAC|1KV V(DRM)|300A I(T)RMS|STF-M23 - BCR300B24
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 - BCR300B4
TRIAC|200V V(DRM)|300A I(T)RMS|STF-M23 - BCR300B8
TRIAC|400V V(DRM)|300A I(T)RMS|STF-M23 - BCR30AM Mitsubishi Electric Semiconductor
MEDIUM POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE - BCR30AM-12 Powerex Power Semiconductors
Triac Ampere/400-600 Volts - BCR30AM-12L Powerex Power Semiconductors
Triac Ampere/400-600 Volts - BCR30AM-12LA Renesas Technology Corp
Triac Medium Power - BCR30AM-12LA-A8 Renesas
Triac Medium Power - BCR30AM-12LB Renesas
Triac Medium Power product guaranteed maximum junction temperature 150??C) - BCR30AM-12LB-A8 Renesas
Triac Medium Power product guaranteed maximum junction temperature 150??C)
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