Datasheet PDF pre K4E160811D-F výsledkami vyhľadávania

• Časť č: K4E160811D-F

  Výrobca:
  Samsung

  Teplota:
  

  Popis:
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.

  Veľkosť PDF: Kb PDF Strany: Page

  Kúpiť K4E160811D-F

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Datasheet na stiahnutie:
K4E160811D-F PDF

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• K4E160811D SAMSUNG[Samsung semiconductor]
  8Bit CMOS Dynamic with Extended Data
• K4E160811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E160812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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